Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
Gaisi Electronics has a complete RMA return process to solve problems you may encounter during use. Our quality database management helps us continue to optimize our products and services to meet your ever-increasing needs.
The CY7C1514LV18-250BZXC is a high-speed Static Random Access Memory (SRAM) device from Cypress/Infineon, featuring 18 megabits (2MB) of storage capacity with a configuration of 512 K x 36. It operates within a voltage range of 1.7 to 1.9 V and utilizes the QuickDraw DRAM II (QDR II) architecture for enhanced performance in high-bandwidth applications. The component comes in a 165-pin Fine-pitch Ball Grid Array (FBGA) package and supports an operating temperature range from 0°C to 70°C. This SRAM is suitable for demanding systems requiring fast data transfer rates.