Infineon Technologies 165-FBGA CY7C1512LV18-250BZXC

The CY7C1512LV18-250BZXC is a high-speed Static Random Access Memory (SRAM) device from Cypress Semiconductor, offering 18Mb (512K x 36) of storage capacity. It operates within a voltage range of 1.7 to 1.9 V and utilizes the Quick Dielectric RAM II (QDR II) architecture for efficient data buffering in high-performance applications. Packaged in a 165-pin FBGA (Fine-Pitch Ball Grid Array) form factor, this component is suitable for demanding systems requiring fast data transfer rates. For detailed specifications and datasheet information, refer to the manufacturer's official documentation.