Infineon Technologies 165-FBGA CY7C1245KV18-400BZXI

Gaisi Electronics sells chips whose main features are high integration, cost reduction, high-speed processing speed, real-time response, diversified interfaces, safe and reliable, low-power design, etc., bringing unlimited possibilities to your smart technology applications!

The CY7C1245KV18-400BZXI is a high-speed Static Random Access Memory (SRAM) device with a 18-Mbit capacity, featuring a 4-word burst mode operation and DDR-II architecture. It operates at a data rate of up to 400 MHz, providing doubled data transfer rate compared to single-data-rate SRAMs. This component is designed for applications requiring high bandwidth and low latency memory access, typically in graphics, networking, or high-performance computing systems.