Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
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The CY7C2563KV18-400BZXI is a high-speed Static Random Access Memory (SRAM) device featuring a 4-Mbit capacity and DDR-I (Double Data Rate I) architecture. This memory chip supports 4-word burst operations, enabling efficient data transfer at twice the frequency of the clock signal. It comes in a BZXI package and is intended for applications requiring high bandwidth and low latency, typically used in graphics, networking, and high-performance computing environments. Specifics such as voltage, speed grade (-400), and detailed pinout information can be found in its datasheet.