Infineon Technologies 165-FBGA CY7C25632KV18-400BZC

The CY7C25632KV18-400BZC is a high-performance Static Random Access Memory (SRAM) device from Cypress Semiconductor, boasting a 256Kb storage capacity with a 4096-word by 64-bit organization. It operates at a low voltage of 1.8V and has a fast clock speed of up to 400MHz. This part features advanced circuit design for reliable operation in high-speed systems and comes in a BZC package, suitable for various applications demanding high-speed data transfer and low power consumption.