Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
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The CY7C1470BV33-167BZI is a high-speed Static Random Access Memory (SRAM) device from Cypress Semiconductor, featuring a DDR-II SIO interface and a 2-word burst architecture. It provides a storage capacity of up to 72 Mbits, designed for high-performance memory applications requiring low latency and high bandwidth data transfer. This particular part operates within a specified voltage range and offers switching characteristics optimized across its operating temperature and frequency ranges for reliable performance in demanding system environments.