Infineon Technologies 165-FBGA CY7C1514KV18-333BZXI

The CY7C1514KV18-323BZXI is a high-performance Static Random Access Memory (SRAM) device from Cypress Semiconductor with 2M x 36 bits of storage capacity. It operates at a clock speed of up to 333MHz, supporting concurrent read and write transactions through separate data ports, enabling high bandwidth operations. This SRAM features independent read and write burst capabilities for efficient data transfer and is built in a DDR-I architecture variant (though the specified part number does not directly indicate DDR-I). Please note that the correct suffix for the mentioned part might be "333BZXC" instead of "333BZXI".