Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
Gaisi Electronics always takes quality as its core and provides you with excellent chip products and services. We are committed to pursuing a "zero-defect" quality management system, covering supplier audit/grading system, quality inspection process, qualified third-party testing agency testing, warehousing/packaging/transportation standards, quality database management and RMA return process to ensure that every link is We strive for excellence to bring you a worry-free purchasing experience.
The CY7C1911KV18-333BZC is a high-speed Static Random Access Memory (SRAM) device from Cypress Semiconductor with a storage capacity of 1536 Kbits (192 K x 8 organization). It operates within a voltage range of typically 1.7 V to 1.9 V and has a FBGA package (14x18 array). This device is designed for parallel memory interface and offers fast write cycle times suitable for demanding applications. The operating temperature range is -40°C to 85°C, making it suitable for extended industrial environments.
