Infineon Technologies 165-FBGA CY7C1312LV18-300BZXI

Gaisi Electronics places quality at the forefront, delivering outstanding chip products and services. Our commitment revolves around a "zero-defect" quality management system encompassing supplier audits and grading, stringent quality inspection processes, third-party testing by qualified agencies, adherence to high standards in warehousing, packaging, and transportation, meticulous management of a quality database, and a robust RMA return process. Each step is meticulously executed to achieve excellence and provide you with a worry-free purchasing experience.

The CY7C1312LV18-300BZXI is a high-speed Static Random Access Memory (SRAM) device from Cypress Semiconductor with a capacity of 1M x 18 bits. It operates at a clock speed of up to 300 MHz and features a low-voltage FBGA165 package, suitable for power-conscious applications in the communication sector. The device provides synchronous DDR II performance, offering dual-rate data transfer for enhanced system efficiency.