Infineon Technologies 165-FBGA CY7C1312KV18-250BZC

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The CY7C1312KV18-250BZC is a high-performance Static Random Access Memory (SRAM) device from Cypress Semiconductor, offering 1M x 16 bits of storage capacity. It operates at a low voltage of 1.8V with a fast access time and features a 250 MHz clock speed for efficient data transfer. The device comes in a BZC package, suitable for high-speed memory applications that require reliable and quick data processing capabilities. This SRAM chip is particularly suited for use in computing systems, telecommunications equipment, and other embedded systems demanding high-density, low-power memory solutions.