Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
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The CY7C12631KV18-400BZI is a high-speed Static Random Access Memory (SRAM) device from Cypress Semiconductor, offering 18-Mbit storage capacity with a data rate of up to 400 MHz. It's designed for high-performance applications where fast read and write cycles are crucial. This particular model features advanced switching characteristics over its operating range, ensuring reliable operation in demanding environments. The BZI packaging denotes that it comes in a small form factor Ball Grid Array (BGA) package suitable for space-constrained designs.