Infineon Technologies 165-FBGA CY7C1312KV18-300BZXC

The CY7C1312KV18-300BZXC is a high-speed Static Random Access Memory (SRAM) component manufactured by Cypress Semiconductor Corp. This device features Quick Dielectric RAM (QDR II) technology, offering dual data rate interfaces for read and write operations. It has a storage capacity of 18-bit words per address location and operates with a supply voltage of 300V. The part comes in a BGA (Ball Grid Array) package and is suitable for applications demanding high bandwidth such as networking and computer systems. It's available from authorized distributors and stocked in various batches with authentic sourcing.