Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
Gaisi Electronics is well aware of the importance of quality, so we strictly control every link to ensure the quality of chips from the source. Our supplier audit/grading system ensures that the raw materials we purchase are original; and the quality inspection process and testing by qualified third-party testing agencies further ensure the quality of the products. At the same time, we also follow strict warehousing, packaging and transportation standards to ensure that the products are delivered to you safely and completely.
The CY7C1312TV18-167BZC is a 12-Mbit DDR-II (Double Data Rate) SRAM with a 2-word burst architecture. It offers high-speed data transfer rates for demanding memory applications, featuring low power consumption and a small footprint. This device has a 167MHz clock speed and operates on a 1.8V supply voltage. Designed for use in systems requiring high bandwidth and efficient data access, it provides reliable performance in computing and networking environments.
