Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
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The CY7C1514V18-250BZI is a high-speed static RAM (SRAM) component from Cypress Semiconductor, designed for high-performance applications. It features a 1M x 18 configuration, providing a large memory capacity with a total of 18 million bits organized as 512K words by 18 bits. This device operates over a wide voltage range and offers fast access times, typically 250ns, making it suitable for demanding systems requiring quick data retrieval. The "BZI" package indicates a specific surface-mount type, likely BGA or similar, which provides high pin density and improved thermal performance. Please refer to the datasheet for detailed electrical specifications, switching characteristics, and packaging information.