Infineon Technologies 165-FBGA CY7C1514KV18-300BZXI

The CY7C1514KV18-300BZXI is a high-speed Static Random Access Memory (SRAM) device featuring a 16-Mbit capacity with a 300 MHz operating speed. It utilizes DDR-II architecture, enabling it to provide high bandwidth in 4-word burst operations. This memory chip is designed for demanding applications that require fast data transfer rates and comes in a BZXI package suitable for surface-mount technology. It offers low power consumption and improved performance compared to previous generations, making it ideal for use in advanced computing, networking, and graphics systems.