Infineon Technologies 165-FBGA CY7C1513KV18-250BZC

The CY7C1513KV18-250BZC is a high-speed Static Random Access Memory (SRAM) device from Cypress Semiconductor, offering 1M x 18 bits of storage capacity. It operates at a speed grade of 250 MHz and features a low-voltage design, supporting reduced power consumption. This particular component adheres to the IEEE 1149.1 standard for JTAG boundary scan (Joint Test Action Group), with TDI pin functionality for serial test data input. The part is suitable for applications requiring high-performance memory and advanced debug/test capabilities in an integrated circuit package.