Infineon Technologies 165-FBGA CY7C1263KV18-400BZXI

The CY7C1263KV18-400BZXI is a Cypress Semiconductor device, specifically a high-speed Static Random Access Memory (SRAM) with DDR-I (Double Data Rate-I) architecture. It offers 128 Mbit of storage capacity and supports 4-word bursts for efficient data transfer. This component is designed for high-performance applications where low latency and high bandwidth are critical. The part features a BZXI package and operates at a speed grade of -400, indicating its maximum clock frequency or timing specifications. For detailed technical specifications and procurement options, consult the manufacturer's datasheet or an authorized distributor.