Infineon Technologies 165-FBGA CY7C1413KV18-333BZI

Gaisi Electronics sells chip products using the most advanced process technology and materials to achieve a high level of integration, allowing you to obtain more powerful functions in a limited space. At the same time, we optimize the production process and reduce costs, allowing you to obtain high-quality products at more favorable prices.

The CY7C1413KV18-333BZI is a high-performance Static RAM (SRAM) device from Cypress Semiconductor, featuring a 128K x 18 configuration with a total of 2.304Mb storage capacity. It operates at a low voltage of 1.8V and has a fast access time of 3 ns, making it suitable for high-speed memory demanding applications. This particular part is packaged in a BZI (Ball Grid Array) package, providing a compact footprint and enhanced signal integrity. The "-333" suffix denotes its speed grade, indicating a cycle time of 333MHz, ensuring efficient data transfer operations.