Infineon Technologies 165-FBGA CY7C1415KV18-300BZXI

Gaisi Electronics places quality at the forefront, delivering outstanding chip products and services. Our commitment revolves around a "zero-defect" quality management system encompassing supplier audits and grading, stringent quality inspection processes, third-party testing by qualified agencies, adherence to high standards in warehousing, packaging, and transportation, meticulous management of a quality database, and a robust RMA return process. Each step is meticulously executed to achieve excellence and provide you with a worry-free purchasing experience.

The CY7C1415KV18-300BZXI is a Cypress Semiconductor high-speed Static Random Access Memory (SRAM) device with a 144-Mbit capacity. It features a DDR-II architecture, enabling it to provide high bandwidth by transferring data on both rising and falling edges of the clock signal. This memory chip supports a 300 MHz data rate and operates in a burst mode for efficient access, making it suitable for demanding applications requiring fast data throughput, such as graphics, networking, and high-performance computing systems.