Infineon Technologies 165-FBGA CY7C1418KV18-250BZXI

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The CY7C1418KV18-250BZXI is a high-speed Static Random Access Memory (SRAM) device from Cypress Semiconductor with a 144-Mbit capacity and DDR-II architecture, supporting 4-word burst operations. It features low power consumption, high bandwidth, and operates at double data rate for efficient data transfer in demanding applications such as networking, graphics, and computing systems. This part is supplied in a BZXI package and has specific timing parameters suitable for high-performance memory subsystems. However, please note that no direct datasheet information is available on this specific date (2024), so actual specifications should be confirmed via the latest manufacturer's datasheet.