Infineon Technologies 165-FBGA CY7C1145KV18-400BZXI

The CY7C1145KV18-400BZXI is a Cypress Semiconductor device, which is a high-speed Static Random Access Memory (SRAM) featuring 9-Mbit capacity and a 4-word burst architecture. It operates using DDR-I (Double Data Rate I) technology, designed to transfer data on both edges of the clock cycle, effectively doubling the data throughput compared to single-data-rate memories. This component is suitable for applications demanding high bandwidth and low latency in computing, networking, and telecommunications systems where rapid access to large volumes of data is crucial.