Infineon Technologies 165-FBGA CY7C1312LV18-300BZXI

The CY7C1312LV18-300BZXI is a high-speed Static Random Access Memory (SRAM) device featuring a 12-Mbit capacity with a 4-word burst architecture. It utilizes Double Data Rate (DDR-I) technology, enabling it to transfer data at twice the rate of a single data rate SRAM. This memory chip supports fast access for demanding applications requiring high bandwidth and low latency, suitable for use in computing, networking, and telecommunications equipment where rapid data storage and retrieval are critical. The part operates at specific speed grades up to 300 MHz.