Infineon Technologies 165-FBGA CY7C1314KV18-250BZC

The CY7C1314KV18-250BZC is a Cypress Semiconductor device, specifically a high-speed synchronous Static Random Access Memory (SRAM) with a storage capacity of 18Mb (1M x 18). It operates in parallel memory interface mode and features a write cycle time optimized for high performance. The part is designed to work within an operating temperature range of 0°C to 70°C (TA). This component adheres to industry standards including potentially IEEE 1149.1 (JTAG) for boundary scan testing as seen in similar Cypress products, though specific details on this feature for the CY7C1314KV18-250BZC should be confirmed via its datasheet.