Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
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The CY7C1520KV18-250BZXI is a high-speed Static Random Access Memory (SRAM) device with a capacity of 18-Mbit, featuring a DDR-II architecture for doubled data transfer rates. This particular model supports 4-word burst operations and comes in a BZXI package suitable for demanding applications requiring high bandwidth and low latency memory solutions. Specifications, datasheets, and availability can be found through semiconductor distributors or the manufacturer Cypress Semiconductor (now Infineon Technologies after acquisition).