Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
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The CY7C1525JV18-250BZC is a high-speed Static Random Access Memory (SRAM) device with a capacity of 18M bits (2MB), organized as 1M words by 18 bits. It features a parallel memory interface and operates within a temperature range from 0°C to 70°C (TA). This particular part likely supports fast write cycle times and comes in a tray package, though specific details like exact performance characteristics or support for additional features such as IEEE 1149.1 JTAG boundary scan may be found in its datasheet. Always consult the manufacturer's documentation for comprehensive specifications and operating conditions.