Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
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The CY7C12681KV18-400BZC is a high-speed Static Random Access Memory (SRAM) device from Cypress Semiconductor, featuring a storage capacity of up to several megabits. It operates at a supply voltage ranging typically from 1.7 V to 1.9 V with an industrial temperature range of 0°C to 70°C. This specific part comes in a 165-FBGA package and supports data rates suitable for high-performance applications such as those requiring QDR (Quad Data Rate) technology. The "-400" in the part number suggests it may be rated for a particular speed grade or clock frequency. For detailed specifications, refer to the manufacturer's datasheet.