Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
Gaisi Electronics is well aware of the importance of quality, so we strictly control every link to ensure the quality of chips from the source. Our supplier audit/grading system ensures that the raw materials we purchase are original; and the quality inspection process and testing by qualified third-party testing agencies further ensure the quality of the products. At the same time, we also follow strict warehousing, packaging and transportation standards to ensure that the products are delivered to you safely and completely.
The CY7C1412BV18-250BZC is a Cypress Semiconductor-manufactured SRAM device with 18Mb (1M x 18) storage capacity, featuring a parallel memory interface and operating within a temperature range of 0°C to 70°C (TA). It comes in an SMD package suitable for surface-mount technology and supports fast write cycle times. The component adheres to IEEE 1149.1 JTAG standards for boundary scan testing. While not directly mentioned, it can be inferred from related part numbers that it may have similar specifications to the other Cypress SRAM series, such as high-speed operation up to 250MHz. For detailed electrical parameters and packaging information, refer to the datasheet.
