Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
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The MXHV9910B is a high voltage N-channel power MOSFET designed for use in switching applications where low on-resistance and fast switching speed are critical. It features a drain-source breakdown voltage of 900V and a maximum continuous drain current of 10A. The device also offers excellent thermal stability, making it suitable for high-power circuits. With its compact SOT-23 package, the MXHV9910B is ideal for space-constrained designs. Additionally, it provides superior noise immunity and electrostatic discharge (ESD) protection, ensuring reliable performance in demanding environments.