Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
GS Electronics' team is composed of experienced chip experts and can provide you with professional technical support and solutions. At the same time, we also provide flexible payment methods and fast logistics services to make your purchasing process more convenient and efficient.
The R3112N351A-TR-FE is an electronic component, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) transistor. It features a low on-resistance of 35mΩ and can handle a maximum drain-source voltage of 40V. The device comes in a compact package that measures just 3mm x 3mm, making it ideal for use in space-constrained applications such as smartphones and laptops. Additionally, the "FE" suffix indicates that this particular model has a fast body diode, allowing for efficient power management in switching circuits. Overall, the R3112N351A-TR-FE offers designers a high-performance solution for their power management needs.
