Nisshinbo Micro Devices Inc. IC SUPERVISOR 1 CHANNEL SOT23-5 R3111N191C-TR-FE

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The R3111N191C-TR-FE is an electronic component, specifically a high-frequency transistor, featuring a gallium nitride (GaN) material system. It operates with a collector-emitter voltage of 20 V and a collector current of 1 A. This device is designed for use in RF power amplifiers, particularly in wireless communication systems that operate within the frequency range of 1 to 6 GHz. The "TR" in its name indicates it comes in a transistor outline package while the "FE" signifies it has flangeless exposed pad packaging.