Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
GS Electronics' team is composed of experienced chip experts and can provide you with professional technical support and solutions. At the same time, we also provide flexible payment methods and fast logistics services to make your purchasing process more convenient and efficient.
The R3111N261A-TR-FE is an electronic component, specifically a high-frequency transistor designed for use in radio frequency (RF) amplification circuits. It features high gain, low noise figure, and high linearity, making it suitable for various RF applications such as wireless communication systems, satellite communications, and radar systems. The device is packaged in a hermetically sealed package to ensure reliable performance over a wide range of environmental conditions. It operates at a maximum frequency of 2 GHz with a power output of up to 4 W. The "TR" in the model name denotes that this device is a transistor, while the "FE" indicates that it uses field-effect technology.
