Nisshinbo Micro Devices Inc. IC SUPERVISOR 1 CHANNEL SOT23-5 R3112N291C-TR-FE

The R3112N291C-TR-FE is a high-speed, low-capacitance transistor designed for use in RF and microwave applications. It features gallium nitride (GaN) technology, which provides excellent power handling capability and superior performance compared to traditional silicon-based transistors. This device operates at frequencies up to 2.9 GHz and has a maximum drain current of 1 A. The R3112N291C-TR-FE is suitable for use in amplifiers, oscillators, and other circuits requiring high-frequency operation and low noise levels. It is available in a surface-mount package, making it easy to integrate into compact designs.