Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
GS Electronics is well aware of the importance of quality, so we strictly control every link to ensure the quality of chips from the source. Our supplier audit/grading system ensures that the raw materials we purchase are original; and the quality inspection process and testing by qualified third-party testing agencies further ensure the quality of the products. At the same time, we also follow strict warehousing, packaging and transportation standards to ensure that the products are delivered to you safely and completely.
The R1224N602G-TR-FE is a high-performance, gallium nitride (GaN) based transistor designed for RF power amplification in wireless communication systems. It operates at frequencies up to 3 GHz and offers a gain of 20 dB with a saturated output power of 47 dBm. The device features thermal resistance and enhanced efficiency, making it suitable for use in demanding applications where heat dissipation is crucial. Its TR-FE package provides excellent electrical and mechanical performance, ensuring reliable operation over a wide range of temperatures and environments.
