Shenzhen Gaisi Electronics Technology Co.,Ltd
Aaron_liu
86-18664915172
86-0755-21046771
86-0755-21046771
aaron@gselectro.com
深圳市福田区振华路122号海外装饰大厦4B10
GS Electronics has a complete RMA return process to solve problems you may encounter during use. Our quality database management helps us continue to optimize our products and services to meet your ever-increasing needs.
The R1224N502M-TR-FE is a high-performance, RF power transistor designed for use in wireless communication systems operating in the 1224 to 1390 MHz frequency range. It features an N-channel enhancement mode Gallium Nitride (GaN) on Silicon Carbide (SiC) heterostructure that provides excellent thermal stability and superior efficiency compared to traditional LDMOS transistors. The device also offers 502 W of output power and has integrated electrostatic discharge protection, making it ideal for applications such as microwave radio links, satellite communications, and radar systems.
