Nisshinbo Micro Devices Inc. 18.5V INPUT PWM/VFM STEP-DOWN DC R1224N502H-TR-FE

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The R1224N502H-TR-FE is a high-performance, RF transistor designed for use in wireless communication systems operating at frequencies up to 3 GHz. It features a gallium nitride (GaN) material system, which provides excellent power density and efficiency. The device also has a thermally-enhanced package, making it suitable for use in compact, densely-packed equipment. Additionally, the R1224N502H-TR-FE offers high gain and linearity, making it ideal for use in transmitter amplifiers and other critical RF signal processing applications.